MSC080SMA330B4 Microchip Technology

Description: MOSFET SIC 3300 V 80 MOHM TO-247, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V, Power Dissipation (Max): 381W (Tc), Vgs(th) (Max) @ Id: 2.97V @ 3mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V.