MSC080SMA330B4 Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET SIC 3300 V 80 MOHM TO-247
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V
Power Dissipation (Max): 381W (Tc)
Vgs(th) (Max) @ Id: 2.97V @ 3mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 3300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 328.09 EUR |
| 25+ | 302.56 EUR |
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Technische Details MSC080SMA330B4 Microchip Technology
Description: MOSFET SIC 3300 V 80 MOHM TO-247, Packaging: Bulk, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V, Power Dissipation (Max): 381W (Tc), Vgs(th) (Max) @ Id: 2.97V @ 3mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V.
Weitere Produktangebote MSC080SMA330B4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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MSC080SMA330B4 | Hersteller : MICROCHIP |
Description: MICROCHIP - MSC080SMA330B4 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 41 A, 3.3 kV, 0.084 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 3.3kV rohsCompliant: YES Dauer-Drainstrom Id: 41A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.97V euEccn: NLR Verlustleistung: 381W Anzahl der Pins: 4Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.084ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| MSC080SMA330B4 | Hersteller : Microchip Technology |
MOSFET SIC 3300 V 80 mOhm TO-247-4 |
Produkt ist nicht verfügbar |
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| MSC080SMA330B4 | Hersteller : Microchip Technology |
MOSFET SIC 3300 V 80 mOhm TO-247-4 |
Produkt ist nicht verfügbar |
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| MSC080SMA330B4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W Mounting: THT Drain current: 26A On-state resistance: 105mΩ Gate charge: 55nC Case: TO247-4 Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Kind of channel: enhanced Technology: SiC Power dissipation: 381W Pulsed drain current: 100A Type of transistor: N-MOSFET Drain-source voltage: 3.3kV |
Produkt ist nicht verfügbar |
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| MSC080SMA330B4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 26A; Idm: 100A; 381W Mounting: THT Drain current: 26A On-state resistance: 105mΩ Gate charge: 55nC Case: TO247-4 Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Kind of channel: enhanced Technology: SiC Power dissipation: 381W Pulsed drain current: 100A Type of transistor: N-MOSFET Drain-source voltage: 3.3kV |
Produkt ist nicht verfügbar |