Technische Details MSC080SMA330B4N Microchip Technology
Description: MOSFET SIC 3300V 80 MOHM TO-247-, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V, Power Dissipation (Max): 381W (Tc), Vgs(th) (Max) @ Id: 2.97V @ 3mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V.
Weitere Produktangebote MSC080SMA330B4N nach Preis ab 95.59 EUR bis 95.59 EUR
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MSC080SMA330B4N | Hersteller : Microchip Technology |
 Description: MOSFET SIC 3300V 80 MOHM TO-247-Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 30A, 20V Power Dissipation (Max): 381W (Tc) Vgs(th) (Max) @ Id: 2.97V @ 3mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3462 pF @ 2400 V |
auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC080SMA330B4N | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 27A; Idm: 107A; 439W Power dissipation: 439W Mounting: THT Kind of package: tube Case: TO247-4-notch Gate charge: 161nC On-state resistance: 106mΩ Drain current: 27A Pulsed drain current: 107A Drain-source voltage: 3.3kV Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Technology: SiC Family: SMA Polarisation: unipolar |
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