MSC080SMA330B4N Microchip Technology
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| Anzahl | Preis |
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| 1+ | 95.52 EUR |
| 30+ | 88.09 EUR |
| 120+ | 76.65 EUR |
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Technische Details MSC080SMA330B4N Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 27A; Idm: 107A; 439W, Mounting: THT, Case: TO247-4, On-state resistance: 106mΩ, Kind of package: tube, Technology: SiC, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Gate charge: 161nC, Power dissipation: 439W, Drain current: 27A, Drain-source voltage: 3.3kV, Pulsed drain current: 107A, Family: SMA, Polarisation: unipolar.
Weitere Produktangebote MSC080SMA330B4N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSC080SMA330B4N | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 27A; Idm: 107A; 439W Mounting: THT Case: TO247-4 On-state resistance: 106mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate charge: 161nC Power dissipation: 439W Drain current: 27A Drain-source voltage: 3.3kV Pulsed drain current: 107A Family: SMA Polarisation: unipolar |
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