MSC090SMA070SDT/R Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET SIC 700 V 90 MOHM TO-263-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
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Technische Details MSC090SMA070SDT/R Microchip Technology
Description: MOSFET SIC 700 V 90 MOHM TO-263-, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V.
Weitere Produktangebote MSC090SMA070SDT/R nach Preis ab 5.99 EUR bis 7.46 EUR
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MSC090SMA070SDT/R | Microchip Technology |
Description: MOSFET SIC 700 V 90 MOHM TO-263- Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +23V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5V @ 750µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC090SMA070SDT/R |
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Hersteller: Microchip Technology
Description: MOSFET SIC 700 V 90 MOHM TO-263-
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: MOSFET SIC 700 V 90 MOHM TO-263-
Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +23V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5V @ 750µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.46 EUR |
| 25+ | 6.88 EUR |
| 100+ | 5.99 EUR |