MSC090SMA070SDT/R Microchip Technology

Description: MOSFET SIC 700 V 90 MOHM TO-263-, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 112mOhm @ 15A, 20V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 5V @ 750µA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 806 pF @ 700 V.