MSC180SMA120B Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 1200V 25A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.98 EUR |
| 25+ | 14.73 EUR |
| 100+ | 12.07 EUR |
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Technische Details MSC180SMA120B Microchip Technology
Description: MOSFET 1200V 25A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 500µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 1000 V.
Weitere Produktangebote MSC180SMA120B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MSC180SMA120B | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W; SMA Power dissipation: 127W Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 34nC Polarisation: unipolar Technology: SiC Drain current: 15A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Family: SMA On-state resistance: 0.225Ω Manufacturer standard package: 30pcs. Pulsed drain current: 40A |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MSC180SMA120B |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W; SMA
Power dissipation: 127W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 0.225Ω
Manufacturer standard package: 30pcs.
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 127W; SMA
Power dissipation: 127W
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 34nC
Polarisation: unipolar
Technology: SiC
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Family: SMA
On-state resistance: 0.225Ω
Manufacturer standard package: 30pcs.
Pulsed drain current: 40A
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)