Technische Details MSC180SMA120S Microchip Technology
Description: MOSFET SIC 1200 V 180 MOHM TO-26, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.26V @ 500µA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V.
Weitere Produktangebote MSC180SMA120S nach Preis ab 16.3 EUR bis 17.66 EUR
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MSC180SMA120S | Microchip Technology |
 Description: MOSFET SIC 1200 V 180 MOHM TO-26Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.26V @ 500µA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V |
auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Microchip Technology
Description: MOSFET SIC 1200 V 180 MOHM TO-26
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.26V @ 500µA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
Description: MOSFET SIC 1200 V 180 MOHM TO-26
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.26V @ 500µA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.66 EUR |
| 25+ | 16.3 EUR |