MSC180SMA120S MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D3PAK
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.57 EUR |
| 8+ | 9.64 EUR |
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Technische Details MSC180SMA120S MICROCHIP TECHNOLOGY
Description: MOSFET SIC 1200 V 180 MOHM TO-26, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.26V @ 500µA, Supplier Device Package: D3Pak, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V.
Weitere Produktangebote MSC180SMA120S nach Preis ab 9.64 EUR bis 15.73 EUR
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MSC180SMA120S | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 40A; 125W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 40A Power dissipation: 125W Case: D3PAK On-state resistance: 0.225Ω Mounting: SMD Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC180SMA120S | Hersteller : Microchip Technology |
Description: MOSFET SIC 1200 V 180 MOHM TO-26 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 225mOhm @ 8A, 20V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.26V @ 500µA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 1000 V |
auf Bestellung 261 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC180SMA120S | Hersteller : Microchip Technology |
MOSFET SIC 1200 V 180 mOhm TO-268 |
Produkt ist nicht verfügbar |