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MSC2X31SDA120J

MSC2X31SDA120J Microchip Technology


Hersteller: Microchip Technology
Description: SIC SBD 1200 V 30 A DUAL PARALLE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227 (ISOTOP®)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 8 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+121.34 EUR
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Technische Details MSC2X31SDA120J Microchip Technology

Description: SIC SBD 1200 V 30 A DUAL PARALLE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: SOT-227 (ISOTOP®), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.

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MSC2X31SDA120J Hersteller : MICROCHIP (MICROSEMI) MSC2X31SDA120J Diode modules
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