MSC360SMA120B MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Power dissipation: 78W
Case: TO247-3
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 21nC
Technology: SiC
Pulsed drain current: 28A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.18 EUR |
| 10+ | 7.36 EUR |
| 11+ | 6.78 EUR |
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Technische Details MSC360SMA120B MICROCHIP TECHNOLOGY
Description: MOSFET SIC 1200 V 360 MOHM TO-24, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ), Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
Weitere Produktangebote MSC360SMA120B nach Preis ab 6.78 EUR bis 11.39 EUR
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MSC360SMA120B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 21nC Technology: SiC Pulsed drain current: 28A |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC360SMA120B | Hersteller : Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM TO-24 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ) Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC360SMA120B | Hersteller : Microchip Technology |
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247 |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC360SMA120B | Hersteller : Microchip Technology / Atmel |
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247 |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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