MSC360SMA120B Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET SIC 1200 V 360 MOHM TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.21 EUR |
| 25+ | 9.41 EUR |
| 100+ | 8.19 EUR |
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Technische Details MSC360SMA120B Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-24, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ), Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
Weitere Produktangebote MSC360SMA120B nach Preis ab 7.26 EUR bis 16.82 EUR
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MSC360SMA120B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 28A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 21nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 63 Stücke: Lieferzeit 7-14 Tag (e) |
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MSC360SMA120B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 28A; 78W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Pulsed drain current: 28A Power dissipation: 78W Case: TO247-3 On-state resistance: 0.45Ω Mounting: THT Gate charge: 21nC Kind of channel: enhanced |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC360SMA120B | Hersteller : Microchip Technology |
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247 |
auf Bestellung 295 Stücke: Lieferzeit 14-28 Tag (e) |
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MSC360SMA120B | Hersteller : Microchip Technology / Atmel |
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247 |
auf Bestellung 55 Stücke: Lieferzeit 14-28 Tag (e) |
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