MSC360SMA120B Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.3 EUR |
| 10+ | 10.42 EUR |
| 30+ | 9.4 EUR |
| 120+ | 9.07 EUR |
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Technische Details MSC360SMA120B Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-24, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ), Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
Weitere Produktangebote MSC360SMA120B nach Preis ab 9.25 EUR bis 13.55 EUR
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MSC360SMA120B | Microchip Technology |
 Description: MOSFET SIC 1200 V 360 MOHM TO-24Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ) Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC360SMA120B | Microchip Technology / Atmel |
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247 |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC360SMA120B |
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Hersteller: Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
Description: MOSFET SIC 1200 V 360 MOHM TO-24
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 500µA (Typ)
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.52 EUR |
| 25+ | 10.63 EUR |
| 100+ | 9.25 EUR |
| MSC360SMA120B |
|
Hersteller: Microchip Technology / Atmel
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247
MOSFET MOSFET SIC 1200 V 360 mOhm TO-247
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.55 EUR |
| 10+ | 13.53 EUR |
| 25+ | 12.46 EUR |
| 100+ | 11.46 EUR |