MSC360SMA120SCT/R Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET SIC 1200 V 360 MOHM PSMT
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Supplier Device Package: 16-PSMT
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
auf Bestellung 1296 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.52 EUR |
| 25+ | 6.93 EUR |
| 100+ | 6.88 EUR |
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Technische Details MSC360SMA120SCT/R Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM PSMT, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 250µA, Supplier Device Package: 16-PSMT, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
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MSC360SMA120SCT/R | Hersteller : Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM PSMT Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.14V @ 250µA Supplier Device Package: 16-PSMT Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V |
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