MSC360SMA120SCT/RM MICROCHIP TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 9A; Idm: 27A; 104W; SMA, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 9A, Power dissipation: 104W, Case: PSMT-16L, On-state resistance: 0.45Ω, Mounting: SMD, Gate charge: 21nC, Kind of channel: enhancement, Manufacturer standard package: 100pcs., Pulsed drain current: 27A, Features of semiconductor devices: Kelvin terminal, Kind of package: reel; tape, Family: SMA.