MSC400SMA330B4N MICROCHIP TECHNOLOGY
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 26.9 EUR |
| 5+ | 16.67 EUR |
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Technische Details MSC400SMA330B4N MICROCHIP TECHNOLOGY
Description: MOSFET SIC 3300V 400 MOHM TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 5A, 20V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 2.97V @ 1mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 579 pF @ 2.4 kV.
Weitere Produktangebote MSC400SMA330B4N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSC400SMA330B4N | Hersteller : Microchip Technology |
 Trans MOSFET N-CH SiC 3.3KV 11A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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MSC400SMA330B4N | Hersteller : Microchip Technology |
Description: MOSFET SIC 3300V 400 MOHM TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5A, 20V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 2.97V @ 1mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 579 pF @ 2.4 kV |
Produkt ist nicht verfügbar |
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MSC400SMA330B4N | Hersteller : Microchip Technology |
SiC MOSFETs MOSFET SIC 3300V 400 mOhm TO-247-4L-Notch |
Produkt ist nicht verfügbar |