MSC400SMA330B4N MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 150W; SMA
Polarisation: unipolar
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Family: SMA
Case: TO247-4-notch
Kind of package: tube
Technology: SiC
Gate charge: 37nC
On-state resistance: 0.5Ω
Drain current: 7A
Pulsed drain current: 27A
Power dissipation: 150W
Drain-source voltage: 3.3kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 23.21 EUR |
| 10+ | 20.88 EUR |
| 30+ | 18.55 EUR |
| 120+ | 16.65 EUR |
| 300+ | 15.72 EUR |
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Technische Details MSC400SMA330B4N MICROCHIP TECHNOLOGY
Description: MOSFET SIC 3300V 400 MOHM TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 5A, 20V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 2.97V @ 1mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 3300 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 579 pF @ 2.4 kV.
Weitere Produktangebote MSC400SMA330B4N nach Preis ab 20.88 EUR bis 23.21 EUR
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| MSC400SMA330B4N | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 7A; Idm: 27A; 150W; SMA Polarisation: unipolar Kind of channel: enhancement Mounting: THT Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Family: SMA Case: TO247-4-notch Kind of package: tube Technology: SiC Gate charge: 37nC On-state resistance: 0.5Ω Drain current: 7A Pulsed drain current: 27A Power dissipation: 150W Drain-source voltage: 3.3kV |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC400SMA330B4N | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 3.3KV 11A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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MSC400SMA330B4N | Hersteller : Microchip Technology |
Description: MOSFET SIC 3300V 400 MOHM TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5A, 20V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 2.97V @ 1mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 3300 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 579 pF @ 2.4 kV |
Produkt ist nicht verfügbar |
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MSC400SMA330B4N | Hersteller : Microchip Technology |
SiC MOSFETs MOSFET SIC 3300V 400 mOhm TO-247-4L-Notch |
Produkt ist nicht verfügbar |