MSC40SM120JCU3 Microchip Technology
Hersteller: Microchip Technology
Description: SICFET N-CH 1.2KV 55A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Description: SICFET N-CH 1.2KV 55A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SOT-227 (ISOTOP®)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 79.34 EUR |
Produktrezensionen
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Technische Details MSC40SM120JCU3 Microchip Technology
Description: SICFET N-CH 1.2KV 55A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 1mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC40SM120JCU3 nach Preis ab 110.16 EUR bis 116.74 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
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MSC40SM120JCU3 | Hersteller : Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SOT227 |
auf Bestellung 8 Stücke: Lieferzeit 14-28 Tag (e) |
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MSC40SM120JCU3 | Hersteller : Microchip Technology | Buck Chopper SiC MOSFET Power Module |
Produkt ist nicht verfügbar |
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MSC40SM120JCU3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |
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MSC40SM120JCU3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 44A; SOT227B; screw; Idm: 110A Case: SOT227B Semiconductor structure: SiC diode/transistor Electrical mounting: screw Mechanical mounting: screw Topology: buck chopper Technology: SiC Power dissipation: 245W Pulsed drain current: 110A Type of module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 44A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |