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MSC750SMA170B4

MSC750SMA170B4 MICROCHIP TECHNOLOGY

pVersion=0046&contRep=ZT&docId=005056AB281E1EDD85E2648BBE8A80D2&compId=MSC750SMA170B4.PDF?ci_sign=a2df3c2cd9ca4392ac5e1c4dffd9da5d053305e5 Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W; SMA
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Family: SMA
Drain-source voltage: 1.7kV
Drain current: 5A
Gate charge: 11nC
Power dissipation: 68W
On-state resistance: 940mΩ
Pulsed drain current: 12A
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.12 EUR
10+7.21 EUR
30+6.94 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MSC750SMA170B4 MICROCHIP TECHNOLOGY

Description: TRANS SJT 1700V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V.

Weitere Produktangebote MSC750SMA170B4 nach Preis ab 6.75 EUR bis 8.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MSC750SMA170B4 MSC750SMA170B4 Hersteller : MICROCHIP TECHNOLOGY pVersion=0046&contRep=ZT&docId=005056AB281E1EDD85E2648BBE8A80D2&compId=MSC750SMA170B4.PDF?ci_sign=a2df3c2cd9ca4392ac5e1c4dffd9da5d053305e5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W; SMA
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Family: SMA
Drain-source voltage: 1.7kV
Drain current: 5A
Gate charge: 11nC
Power dissipation: 68W
On-state resistance: 940mΩ
Pulsed drain current: 12A
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.12 EUR
10+7.21 EUR
30+6.94 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MSC750SMA170B4 MSC750SMA170B4 Hersteller : Microchip Technology Microsemi_SiC_Product_Brochure.pdf Description: TRANS SJT 1700V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.41 EUR
25+7.76 EUR
100+6.75 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MSC750SMA170B4 MSC750SMA170B4 Hersteller : Microchip Technology Microsemi_MSC750SMA170B_SiC_MOSFET_Datasheet_B-3444400.pdf SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-247-4
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.48 EUR
30+7.83 EUR
120+6.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MSC750SMA170B4 Hersteller : Microchip Technology microsemi_msc750sma170b4_sic_mosfet_datasheet_a.pdf MOSFET SIC 1700 V 750 mOhm TO-247-4
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