MSC750SMA170B4 Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.09 EUR |
| 10+ | 9.32 EUR |
| 120+ | 8.1 EUR |
| 510+ | 7.88 EUR |
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Technische Details MSC750SMA170B4 Microchip Technology
Description: TRANS SJT 1700V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V.
Weitere Produktangebote MSC750SMA170B4 nach Preis ab 8.27 EUR bis 10.33 EUR
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MSC750SMA170B4 | Microchip Technology |
 Description: TRANS SJT 1700V TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V |
auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC750SMA170B4 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W; SMA Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 5A Power dissipation: 68W Case: TO247-4 On-state resistance: 940mΩ Mounting: THT Gate charge: 11nC Kind of channel: enhancement Manufacturer standard package: 30pcs. Pulsed drain current: 12A Features of semiconductor devices: Kelvin terminal Kind of package: tube Family: SMA |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MSC750SMA170B4 |
|
Hersteller: Microchip Technology
Description: TRANS SJT 1700V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
Description: TRANS SJT 1700V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.33 EUR |
| 25+ | 9.51 EUR |
| 100+ | 8.27 EUR |
| MSC750SMA170B4 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W; SMA
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Power dissipation: 68W
Case: TO247-4
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 11nC
Kind of channel: enhancement
Manufacturer standard package: 30pcs.
Pulsed drain current: 12A
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Family: SMA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W; SMA
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Power dissipation: 68W
Case: TO247-4
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 11nC
Kind of channel: enhancement
Manufacturer standard package: 30pcs.
Pulsed drain current: 12A
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Family: SMA
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)