MSC750SMA170B4 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W; SMA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 5A
Pulsed drain current: 12A
Power dissipation: 68W
Case: TO247-4
On-state resistance: 940mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Family: SMA
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.45 EUR |
| 11+ | 6.94 EUR |
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Technische Details MSC750SMA170B4 MICROCHIP TECHNOLOGY
Description: TRANS SJT 1700V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V.
Weitere Produktangebote MSC750SMA170B4 nach Preis ab 6.81 EUR bis 8.54 EUR
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MSC750SMA170B4 | Hersteller : Microchip Technology |
SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-247-4 |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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MSC750SMA170B4 | Hersteller : Microchip Technology |
Description: TRANS SJT 1700V TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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