Technische Details MSC750SMA170B4 Microchip Technology
Description: TRANS SJT 1700V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V.
Weitere Produktangebote MSC750SMA170B4 nach Preis ab 6.84 EUR bis 8.54 EUR
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MSC750SMA170B4 | Microchip Technology |
 Description: TRANS SJT 1700V TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC750SMA170B4 |
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Hersteller: Microchip Technology
Description: TRANS SJT 1700V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
Description: TRANS SJT 1700V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
auf Bestellung 419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.54 EUR |
| 25+ | 7.86 EUR |
| 100+ | 6.84 EUR |