MSC750SMA170B4 Microchip Technology
Hersteller: Microchip TechnologyDescription: TRANS SJT 1700V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
auf Bestellung 109 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 9.12 EUR |
| 25+ | 8.4 EUR |
| 100+ | 7.31 EUR |
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Technische Details MSC750SMA170B4 Microchip Technology
Description: TRANS SJT 1700V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ), Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V.
Weitere Produktangebote MSC750SMA170B4 nach Preis ab 10.89 EUR bis 13.57 EUR
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MSC750SMA170B4 | Hersteller : Microchip Technology |
MOSFET MOSFET SIC 1700 V 750 mOhm TO-247-4 |
auf Bestellung 279 Stücke: Lieferzeit 14-28 Tag (e) |
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| MSC750SMA170B4 | Hersteller : Microchip Technology |
MOSFET SIC 1700 V 750 mOhm TO-247-4 |
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MSC750SMA170B4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Mounting: THT Case: TO247-4 Power dissipation: 68W Gate charge: 11nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.7kV Type of transistor: N-MOSFET On-state resistance: 940mΩ Pulsed drain current: 12A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC750SMA170B4 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 5A; Idm: 12A; 68W Mounting: THT Case: TO247-4 Power dissipation: 68W Gate charge: 11nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 5A Kind of channel: enhanced Drain-source voltage: 1.7kV Type of transistor: N-MOSFET On-state resistance: 940mΩ Pulsed drain current: 12A |
Produkt ist nicht verfügbar |