MSCGLQ50DH120CTBL2NG Microchip Technology
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| Anzahl | Preis |
|---|---|
| 1+ | 254.74 EUR |
| 100+ | 189.25 EUR |
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Technische Details MSCGLQ50DH120CTBL2NG Microchip Technology
Description: PM-IGBT-SBD-BL2, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Asymmetrical Bridge, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 375 W, Current - Collector Cutoff (Max): 25 µA, Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V.
Weitere Produktangebote MSCGLQ50DH120CTBL2NG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSCGLQ50DH120CTBL2NG | Hersteller : Microchip Technology |
 Description: PM-IGBT-SBD-BL2Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: Yes Part Status: Active Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 375 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 2.77 nF @ 25 V |
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