Produkte > MICROCHIP TECHNOLOGY > MSCSM120AM02T6LIAG

MSCSM120AM02T6LIAG Microchip Technology


mscsm120am02t6liag-sic-mosfet-module-ds00004562.pdf Hersteller: Microchip Technology
Very Low Stray Inductance Phase Leg SiC MOSFET Power
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MSCSM120AM02T6LIAG Microchip Technology

Description: MOSFET 2N-CH 1200V 947A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 3.75kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 947A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 36mA, Part Status: Active.

Weitere Produktangebote MSCSM120AM02T6LIAG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MSCSM120AM02T6LIAG Hersteller : Microchip Technology MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MSCSM120AM02T6LIAG MSCSM120AM02T6LIAG Hersteller : Microchip Technology MSCSM120AM02T6LIAG_SiC_MOSFET_module_DS00004562-3005697.pdf MOSFET Modules PM-MOSFET-SIC-SP6L1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH