MSCSM120AM03CT6LIAG Microchip Technology
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1957.79 EUR |
| 25+ | 1916.78 EUR |
| 100+ | 1736.08 EUR |
| 250+ | 1726.07 EUR |
| 500+ | 1696.31 EUR |
| 1000+ | 1696.13 EUR |
| 5000+ | 1695.81 EUR |
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Technische Details MSCSM120AM03CT6LIAG Microchip Technology
Description: MOSFET 2N-CH 1200V 805A SP6C LI, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 3.215kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 805A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV, Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 10mA, Supplier Device Package: SP6C LI, Part Status: Active.
Weitere Produktangebote MSCSM120AM03CT6LIAG nach Preis ab 2239.46 EUR bis 2239.46 EUR
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MSCSM120AM03CT6LIAG | Hersteller : Microchip Technology |
 Description: MOSFET 2N-CH 1200V 805A SP6C LIPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.215kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1kV Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 10mA Supplier Device Package: SP6C LI Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120AM03CT6LIAG | Hersteller : Microchip Technology |
Very Low Stray Inductance Phase Leg SiC MOSFET Power Module |
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