MSCSM120AM042CD3AG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 974.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MSCSM120AM042CD3AG Microchip Technology
Description: MOSFET 2N-CH 1200V 495A D3, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.031kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Supplier Device Package: D3, Part Status: Active.
Weitere Produktangebote MSCSM120AM042CD3AG nach Preis ab 1041.88 EUR bis 1041.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
MSCSM120AM042CD3AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| MSCSM120AM042CD3AG | Hersteller : Microchip Technology |
UNRLS CC7147 |
Produkt ist nicht verfügbar |
||||||
| MSCSM120AM042CD3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Type of semiconductor module: MOSFET transistor Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||
| MSCSM120AM042CD3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Type of semiconductor module: MOSFET transistor Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W |
Produkt ist nicht verfügbar |