MSCSM120AM042T6AG Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 2031W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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Technische Details MSCSM120AM042T6AG Microchip Technology
Description: MOSFET 2N-CH 1200V 495A, Vgs(th) (Max) @ Id: 2.8V @ 18mA, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 2031W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube.