MSCSM120AM16CT1AG Microchip Technology
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| Anzahl | Preis |
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| 1+ | 322.36 EUR |
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Technische Details MSCSM120AM16CT1AG Microchip Technology
Description: SIC 2N-CH 1200V 173A SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 745W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Supplier Device Package: SP1F.
Weitere Produktangebote MSCSM120AM16CT1AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MSCSM120AM16CT1AG | Hersteller : Microchip Technology |
 Phase Leg Sic Mosfet Power Module |
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| MSCSM120AM16CT1AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSCSM120AM16CT1AG | Hersteller : Microchip Technology |
Description: SIC 2N-CH 1200V 173A SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP1F |
Produkt ist nicht verfügbar |
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| MSCSM120AM16CT1AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SP1F; Press-in PCB Case: SP1F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Pulsed drain current: 350A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC |
Produkt ist nicht verfügbar |