MSCSM120AM50CT1AG Microchip Technology

Description: SIC 2N-CH 1200V 55A SP1F, Packaging: Tube, Part Status: Active, Supplier Device Package: SP1F, Vgs(th) (Max) @ Id: 2.7V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 245W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module.