MSCSM120DAM11CT3AG Microchip Technology
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 285.4 EUR |
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Technische Details MSCSM120DAM11CT3AG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB, Type of semiconductor module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 1.2kV, Drain current: 202A, Case: SP3F, Topology: boost chopper; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 10.4mΩ, Pulsed drain current: 500A, Power dissipation: 1067W, Technology: SiC, Mechanical mounting: screw.
Weitere Produktangebote MSCSM120DAM11CT3AG nach Preis ab 423.74 EUR bis 423.74 EUR
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MSCSM120DAM11CT3AG | Hersteller : Microchip Technology |
 Description: PM-MOSFET-SIC-SBD~-SP3FPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 1 Phase Voltage - Isolation: 4000Vrms Current: 254 A Voltage: 1.2 kV |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DAM11CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 202A; SP3F; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 202A Case: SP3F Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 10.4mΩ Pulsed drain current: 500A Power dissipation: 1067W Technology: SiC Mechanical mounting: screw |
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