MSCSM120DAM31CTBL1NG Microchip Technology

Description: PM-MOSFET-SIC-SBD-BL1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 310W, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V.