MSCSM120DDUM16CTBL3NG Microchip Technology
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 721.02 EUR |
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Technische Details MSCSM120DDUM16CTBL3NG Microchip Technology
Description: SIC 4N-CH 1200V 150A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Common Source, Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 560W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 150A, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Part Status: Active.
Weitere Produktangebote MSCSM120DDUM16CTBL3NG nach Preis ab 968.63 EUR bis 968.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MSCSM120DDUM16CTBL3NG | Hersteller : Microchip Technology |
Description: SIC 4N-CH 1200V 150A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel, Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 560W Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Part Status: Active |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120DDUM16CTBL3NG | Hersteller : Microchip Technology | PM-MOSFET-SIC-SBD-BL3 |
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