Technische Details MSCSM120DDUM16CTBL3NG Microchip Technology
Description: SIC 4N-CH 1200V 150A, Part Status: Active, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 150A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 560W, Technology: Silicon Carbide (SiC), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 4 N-Channel, Common Source, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Weitere Produktangebote MSCSM120DDUM16CTBL3NG nach Preis ab 968.63 EUR bis 968.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
| MSCSM120DDUM16CTBL3NG | Microchip Technology |
Description: SIC 4N-CH 1200V 150A Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 150A Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 560W Technology: Silicon Carbide (SiC) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 4 N-Channel, Common Source Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MSCSM120DDUM16CTBL3NG |
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 150A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 560W
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 4 N-Channel, Common Source
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: SIC 4N-CH 1200V 150A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 560W
Technology: Silicon Carbide (SiC)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 4 N-Channel, Common Source
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 968.63 EUR |