MSCSM120DUM08T3AG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 491.44 EUR |
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Technische Details MSCSM120DUM08T3AG Microchip Technology
Description: MOSFET 2N-CH 1200V 337A SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1409W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 337A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 4mA, Supplier Device Package: SP3F, Part Status: Active.
Weitere Produktangebote MSCSM120DUM08T3AG nach Preis ab 647.26 EUR bis 647.26 EUR
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MSCSM120DUM08T3AG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1200V 337A SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1409W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP3F Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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