MSCSM120DUM31CTBL1NG Microchip Technology
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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 277.96 EUR |
| 100+ | 206.48 EUR |
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Technische Details MSCSM120DUM31CTBL1NG Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 310W, Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 79A, Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Part Status: Active.
Weitere Produktangebote MSCSM120DUM31CTBL1NG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSCSM120DUM31CTBL1NG | Hersteller : Microchip Technology |
Description: PM-MOSFET-SIC-SBD-BL1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 310W Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 79A Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Part Status: Active |
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