MSCSM120HM083AG Microchip Technology

Description: MOSFET 4N-CH 1200V 251A, Part Status: Active, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 251A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1.042kW (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.