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MSCSM120HM16CT3AG Microchip Technology


csm120hm16ct3ag_full_bridgesic_mosfet_power_module_rv1.0.pdf Hersteller: Microchip Technology
Full Bridge Sic Mosfet Power Module
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Technische Details MSCSM120HM16CT3AG Microchip Technology

Description: SIC 4N-CH 1200V 173A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 745W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Supplier Device Package: SP3F.

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MSCSM120HM16CT3AG Hersteller : MICROCHIP TECHNOLOGY 1244787-mscsm120hm16ct3ag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Anzahl je Verpackung: 1 Stücke
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MSCSM120HM16CT3AG MSCSM120HM16CT3AG Hersteller : Microchip Technology 1244787-mscsm120hm16ct3ag-datasheet Description: SIC 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
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MSCSM120HM16CT3AG MSCSM120HM16CT3AG Hersteller : Microchip Technology Microsemi_MSCSM120HM16CT3AG_Full_BridgeSiC_MOSFET_-3444052.pdf Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F
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MSCSM120HM16CT3AG Hersteller : MICROCHIP TECHNOLOGY 1244787-mscsm120hm16ct3ag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 138A; SP3F; Press-in PCB
Case: SP3F
Topology: H bridge + parrallel diodes; NTC thermistor
Pulsed drain current: 350A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 138A
On-state resistance: 16mΩ
Power dissipation: 745W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH