MSCSM120HM16CTBL3NG Microchip Technology
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1002.94 EUR |
| 100+ | 745.04 EUR |
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Technische Details MSCSM120HM16CTBL3NG Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Phase Leg), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 560W, Drain to Source Voltage (Vdss): 1200V, Current - Continuous Drain (Id) @ 25°C: 150A, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 2mA, Part Status: Active.
Weitere Produktangebote MSCSM120HM16CTBL3NG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MSCSM120HM16CTBL3NG | Hersteller : Microchip Technology |
 PM-MOSFET-SIC-SBD-BL3 |
Produkt ist nicht verfügbar |
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| MSCSM120HM16CTBL3NG | Hersteller : Microchip Technology |
Description: PM-MOSFET-SIC-SBD-BL3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Phase Leg) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 560W Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 150A Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Part Status: Active |
Produkt ist nicht verfügbar |