MSCSM120HM16TBL3NG Microchip Technology
Hersteller: Microchip TechnologyDescription: SIC 6N-CH 1200V 150A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 560W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
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Technische Details MSCSM120HM16TBL3NG Microchip Technology
Description: SIC 6N-CH 1200V 150A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (Phase Leg), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 560W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 150A, Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA.
Weitere Produktangebote MSCSM120HM16TBL3NG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCSM120HM16TBL3NG | Hersteller : Microchip Technology |
MOSFET Modules PM-MOSFET-SIC-BL3 |
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