MSCSM120HM31CT3AG Microchip Technology
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 335.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MSCSM120HM31CT3AG Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 395W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SP3F, Part Status: Active.
Weitere Produktangebote MSCSM120HM31CT3AG nach Preis ab 439.40 EUR bis 485.00 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
MSCSM120HM31CT3AG | Hersteller : Microchip Technology |
Description: SIC 4N-CH 1200V 89A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SP3F Part Status: Active |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
|
|
MSCSM120HM31CT3AG | Hersteller : Microchip Technology / Atmel |
 Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
| MSCSM120HM31CT3AG | Hersteller : Microchip Technology |
UNRLS CC3240 |
Produkt ist nicht verfügbar |
||||||
| MSCSM120HM31CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||
| MSCSM120HM31CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 71A; SP3F; Press-in PCB; 395W Case: SP3F Topology: H bridge + parrallel diodes; NTC thermistor Pulsed drain current: 180A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 71A On-state resistance: 31mΩ Power dissipation: 395W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC |
Produkt ist nicht verfügbar |