Technische Details MSCSM120HM31CT3AG Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F, Part Status: Active, Supplier Device Package: SP3F, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 395W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube.
Weitere Produktangebote MSCSM120HM31CT3AG nach Preis ab 439.4 EUR bis 485 EUR
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MSCSM120HM31CT3AG | Microchip Technology |
Description: SIC 4N-CH 1200V 89A SP3F Part Status: Active Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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MSCSM120HM31CT3AG | Microchip Technology / Atmel |
 Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM31CT3AG |
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F
Part Status: Active
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Description: SIC 4N-CH 1200V 89A SP3F
Part Status: Active
Supplier Device Package: SP3F
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 439.4 EUR |
| MSCSM120HM31CT3AG |
|
Hersteller: Microchip Technology / Atmel
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 485 EUR |