MSCSM120SKM31CTBL1NG Microchip Technology
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 287.56 EUR |
| 100+ | 213.64 EUR |
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Technische Details MSCSM120SKM31CTBL1NG Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL1, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 310W, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V.
Weitere Produktangebote MSCSM120SKM31CTBL1NG nach Preis ab 285.53 EUR bis 285.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MSCSM120SKM31CTBL1NG | Hersteller : Microchip Technology |
 Description: PM-MOSFET-SIC-SBD-BL1Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Power Dissipation (Max): 310W Vgs(th) (Max) @ Id: 2.8V @ 1mA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V |
auf Bestellung 27 Stücke: Lieferzeit 21-28 Tag (e) |
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