MSCSM120SKM31CTBL1NG Microchip Technology
Hersteller: Microchip TechnologyDescription: PM-MOSFET-SIC-SBD-BL1
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 310W
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 134.04 EUR |
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Technische Details MSCSM120SKM31CTBL1NG Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL1, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Power Dissipation (Max): 310W, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCSM120SKM31CTBL1NG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1 |
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