MSCSM120TAM11CTPAG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1606.09 EUR |
| 25+ | 1565.52 EUR |
| 100+ | 1416.69 EUR |
| 250+ | 1408.58 EUR |
| 500+ | 1384.59 EUR |
| 1000+ | 1384.38 EUR |
| 5000+ | 1384.05 EUR |
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Technische Details MSCSM120TAM11CTPAG Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.042kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 251A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA, Supplier Device Package: SP6-P, Part Status: Active.
Weitere Produktangebote MSCSM120TAM11CTPAG nach Preis ab 1797.44 EUR bis 1797.44 EUR
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MSCSM120TAM11CTPAG | Hersteller : Microchip Technology |
 Description: SIC 6N-CH 1200V 251A SP6-PPackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP6-P Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TAM11CTPAG | Hersteller : Microchip Technology |
Triple Phase Leg Sic Mosfet Power Module |
Produkt ist nicht verfügbar |
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| MSCSM120TAM11CTPAG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM120TAM11CTPAG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB Case: SP6P Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor Pulsed drain current: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10.4mΩ Power dissipation: 1042W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC |
Produkt ist nicht verfügbar |