MSCSM120VR1M062CT6AG Microchip Technology

Description: MOSFET 2N-CH 1200V 420A, Rds On (Max) @ Id, Vgs: 6.2mOhm @ 200A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 420A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 1.753kW (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Part Status: Active, Vgs(th) (Max) @ Id: 2.8V @ 15mA, Gate Charge (Qg) (Max) @ Vgs: 1160nC @ 20V.