MSCSM120XM50CTYZBNMG Microchip Technology
Hersteller: Microchip TechnologyDescription: PM-MOSFET-SIC-SBD-6HPD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 196W (Tc), 315W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA
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Technische Details MSCSM120XM50CTYZBNMG Microchip Technology
Description: PM-MOSFET-SIC-SBD-6HPD, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 196W (Tc), 315W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V, Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCSM120XM50CTYZBNMG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD |
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