MSCSM120XM50CTYZBNMG Microchip Technology
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Technische Details MSCSM120XM50CTYZBNMG Microchip Technology
Description: MOSFET 6N-CH 1200V 49A, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 196W (Tc), 315W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V, Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSCSM120XM50CTYZBNMG | Hersteller : Microchip Technology |
 Description: MOSFET 6N-CH 1200V 49APackaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 196W (Tc), 315W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA |
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