MSCSM170AM058CT6LIAG Microchip Technology
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details MSCSM170AM058CT6LIAG Microchip Technology
Description: MOSFET 2N-CH 1700V 353A, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.642kW (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 353A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, Vgs(th) (Max) @ Id: 3.3V @ 15mA.
Weitere Produktangebote MSCSM170AM058CT6LIAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MSCSM170AM058CT6LIAG | Hersteller : Microchip Technology |
 Very Low Stray Inductance Phase Leg SiC MOSFET Power Module |
Produkt ist nicht verfügbar |
||
 |
MSCSM170AM058CT6LIAG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 1700V 353A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.642kW (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA |
Produkt ist nicht verfügbar |