Produkte > MICROCHIP TECHNOLOGY > MSCSM170AM45CT1AG
MSCSM170AM45CT1AG

MSCSM170AM45CT1AG Microchip Technology


00003938A.pdf Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1700V 64A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 319W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA
Part Status: Active
auf Bestellung 6 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+199.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MSCSM170AM45CT1AG Microchip Technology

Description: MOSFET 2N-CH 1700V 64A, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, Part Status: Active.

Weitere Produktangebote MSCSM170AM45CT1AG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MSCSM170AM45CT1AG Hersteller : Microchip Technology 00003938A-3442144.pdf Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH