MSCSM170HRM075NG Microchip Technology

Description: SIC 4N-CH 1700V/1200V 337A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.492kW (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V, Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA, Part Status: Active.