MSCSM170HRM451AG Microchip Technology

Description: SIC 4N-CH 1700V/1200V 64A/89A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 319W (Tc), 395W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA, Part Status: Active.