MSCSM70AM025T6AG Microchip Technology

Description: PM-MOSFET-SIC-SP6C, Part Status: Active, Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V, Current - Continuous Drain (Id) @ 25°C: 689A (Tc), Drain to Source Voltage (Vdss): 700V, Power - Max: 1.882kW (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Vgs(th) (Max) @ Id: 2.4V @ 24mA.