MSCSM70AM19CT1AG Microchip Technology

Description: MOSFET 2N-CH 700V 124A SP1F, Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V, Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Drain to Source Voltage (Vdss): 700V, Power - Max: 365W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N Channel (Phase Leg), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube, Supplier Device Package: SP1F, Vgs(th) (Max) @ Id: 2.4V @ 4mA.