MSCSM70AM19CT1AG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W
Case: SP1F
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Drain current: 98A
Pulsed drain current: 250A
Power dissipation: 365W
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 700V
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: SiC diode/transistor
Anzahl je Verpackung: 1 Stücke
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Technische Details MSCSM70AM19CT1AG MICROCHIP TECHNOLOGY
Description: MOSFET 2N-CH 700V 124A SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 365W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V, Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 4mA, Supplier Device Package: SP1F.
Weitere Produktangebote MSCSM70AM19CT1AG
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MSCSM70AM19CT1AG | Hersteller : Microchip Technology |
Description: MOSFET 2N-CH 700V 124A SP1F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP1F |
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MSCSM70AM19CT1AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F |
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| MSCSM70AM19CT1AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP1F; Press-in PCB; 365W Case: SP1F Electrical mounting: Press-in PCB On-state resistance: 19mΩ Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Drain current: 98A Pulsed drain current: 250A Power dissipation: 365W Type of semiconductor module: MOSFET transistor Drain-source voltage: 700V Mechanical mounting: screw Technology: SiC Semiconductor structure: SiC diode/transistor |
Produkt ist nicht verfügbar |