MSCSM70HM19CT3AG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 98A
Case: SP3F
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 19mΩ
Pulsed drain current: 250A
Power dissipation: 365W
Technology: SiC
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details MSCSM70HM19CT3AG MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W, Type of semiconductor module: MOSFET transistor, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 700V, Drain current: 98A, Case: SP3F, Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 19mΩ, Pulsed drain current: 250A, Power dissipation: 365W, Technology: SiC, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MSCSM70HM19CT3AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MSCSM70HM19CT3AG | Hersteller : Microchip Technology |
Description: MOSFET 4N-CH 700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Supplier Device Package: SP3F |
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MSCSM70HM19CT3AG | Hersteller : Microchip Technology |
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
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| MSCSM70HM19CT3AG | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 700V; 98A; SP3F; Press-in PCB; 365W Type of semiconductor module: MOSFET transistor Semiconductor structure: SiC diode/transistor Drain-source voltage: 700V Drain current: 98A Case: SP3F Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 19mΩ Pulsed drain current: 250A Power dissipation: 365W Technology: SiC Mechanical mounting: screw |
Produkt ist nicht verfügbar |