MSCSM70VM10C4AG Microchip Technology
Hersteller: Microchip TechnologyDescription: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 548.12 EUR |
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Technische Details MSCSM70VM10C4AG Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP4, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 674W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 238A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V, Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 8mA, Supplier Device Package: SP4, Part Status: Active.
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