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MSCSM70VR1M19C1AG Microchip Technology


mscsm70vr1m19c1ag-sic-mosfet-module-ds00004711.pdf Hersteller: Microchip Technology
SiC MOSFET Power Module
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Technische Details MSCSM70VR1M19C1AG Microchip Technology

Description: SIC 2N-CH 700V 124A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 365W (Tc), Drain to Source Voltage (Vdss): 700V, Current - Continuous Drain (Id) @ 25°C: 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V, Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V, Vgs(th) (Max) @ Id: 2.4V @ 4mA.

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MSCSM70VR1M19C1AG Hersteller : Microchip Technology MSCSM70VR1M19C1AG-SiC-MOSFET-module-DS00004711.pdf Description: SIC 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Produkt ist nicht verfügbar