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MSJB11N80A-TP

MSJB11N80A-TP Micro Commercial Co


MSJB11N80A(D2PAK).pdf Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 1600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+7.66 EUR
1600+ 6.89 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details MSJB11N80A-TP Micro Commercial Co

Description: N-CHANNEL MOSFET, D2-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V, Power Dissipation (Max): 156W (Tj), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V.

Weitere Produktangebote MSJB11N80A-TP nach Preis ab 6.92 EUR bis 12.25 EUR

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Preis ohne MwSt
MSJB11N80A-TP MSJB11N80A-TP Hersteller : Micro Commercial Co MSJB11N80A(D2PAK).pdf Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 7.1A, 10V
Power Dissipation (Max): 156W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 958 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.16 EUR
10+ 10.41 EUR
100+ 8.68 EUR
Mindestbestellmenge: 2
MSJB11N80A-TP MSJB11N80A-TP Hersteller : Micro Commercial Components (MCC) MSJB11N80A_D2PAK_-3366084.pdf MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+12.25 EUR
10+ 10.49 EUR
25+ 9.52 EUR
100+ 8.75 EUR
250+ 8.24 EUR
500+ 7.73 EUR
800+ 6.92 EUR