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MSJP09N65A-BP

MSJP09N65A-BP Micro Commercial Co

MSJP09N65A(TO-220ABH).pdf Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, TO-220AB(H)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 1.5A, 10V
Power Dissipation (Max): 113W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 383 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.07 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
2000+ 1.04 EUR
5000+ 0.99 EUR
Mindestbestellmenge: 7
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Technische Details MSJP09N65A-BP Micro Commercial Co

Description: N-CHANNEL MOSFET, TO-220AB(H), Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 960mOhm @ 1.5A, 10V, Power Dissipation (Max): 113W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 383 pF @ 30 V.

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MSJP09N65A-BP MSJP09N65A-BP Hersteller : Micro Commercial Components (MCC) MSJP09N65A_TO_220ABH_-3133577.pdf MOSFET 650Vds 30Vgs N-Ch Super Junction FET
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