
MSJP11N65-BP MCC (Micro Commercial Components)

Description: MOSFET N-CH 650V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 4926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 4.21 EUR |
50+ | 2.07 EUR |
100+ | 1.86 EUR |
500+ | 1.49 EUR |
1000+ | 1.38 EUR |
2000+ | 1.28 EUR |
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Technische Details MSJP11N65-BP MCC (Micro Commercial Components)
Description: MOSFET N-CH 650V 11A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB (H), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V.
Weitere Produktangebote MSJP11N65-BP nach Preis ab 2.45 EUR bis 5.17 EUR
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MSJP11N65-BP | Hersteller : Micro Commercial Components (MCC) |
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auf Bestellung 4973 Stücke: Lieferzeit 10-14 Tag (e) |
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