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MSMBJ33CAE3 MICROSEMI


10560-msmb-datasheet Hersteller: MICROSEMI
DO-214AA/600 W, BIDIRECTIONAL, SILICON, TVS DIODE MSMBJ33
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Technische Details MSMBJ33CAE3 MICROSEMI

Description: TVS DIODE 33VWM 53.3VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 11.3A, Voltage - Reverse Standoff (Typ): 33V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 36.7V, Voltage - Clamping (Max) @ Ipp: 53.3V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.

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MSMBJ33CAE3 MSMBJ33CAE3 Hersteller : Microchip Technology 10560-msmb-datasheet Description: TVS DIODE 33VWM 53.3VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMBJ33CAE3 MSMBJ33CAE3 Hersteller : Microchip Technology RF01000-1594034.pdf ESD Suppressors / TVS Diodes TVS
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