MSMBJ6.0CAE3 Microchip Technology
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Technische Details MSMBJ6.0CAE3 Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AA, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 58.3A, Voltage - Reverse Standoff (Typ): 6V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 6.67V, Voltage - Clamping (Max) @ Ipp: 10.3V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMBJ6.0CAE3
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MSMBJ6.0CAE3 | Hersteller : MICROCHIP TECHNOLOGY |
 Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: DO214AA Mounting: SMD Leakage current: 0.8mA Tolerance: ±5% Anzahl je Verpackung: 1 Stücke |
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| MSMBJ6.0CAE3 | Hersteller : MICROSEMI |
DO-214AA/Surface Mount 600 Watt Transient Voltage Suppressor MSMBJ6.0 Anzahl je Verpackung: 1 Stücke |
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MSMBJ6.0CAE3 | Hersteller : Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AA Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 58.3A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MSMBJ6.0CAE3 | Hersteller : Microchip Technology |
ESD Protection Diodes / TVS Diodes TVS 6V 5% 600W bi |
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MSMBJ6.0CAE3 | Hersteller : MICROCHIP TECHNOLOGY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Case: DO214AA Mounting: SMD Leakage current: 0.8mA Tolerance: ±5% |
Produkt ist nicht verfügbar |