MSMBJ6.0CAE3 MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 7V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA
Mounting: SMD
Leakage current: 0.8mA
Anzahl je Verpackung: 1 Stücke
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Technische Details MSMBJ6.0CAE3 MICROCHIP (MICROSEMI)
Description: TVS DIODE 6VWM 10.3VC SMBJ, Packaging: Bulk, Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 58.3A, Voltage - Reverse Standoff (Typ): 6V, Supplier Device Package: DO-214AA (SMBJ), Bidirectional Channels: 1, Voltage - Breakdown (Min): 6.67V, Voltage - Clamping (Max) @ Ipp: 10.3V, Power - Peak Pulse: 600W, Power Line Protection: No, Grade: Military, Part Status: Active, Qualification: MIL-PRF-19500.
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MSMBJ6.0CAE3 | Hersteller : Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 58.3A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MSMBJ6.0CAE3 | Hersteller : Microchip Technology |
ESD Suppressors / TVS Diodes TVS 6V 5% 600W bi |
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MSMBJ6.0CAE3 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 7V; 58.3A; bidirectional; ±5%; DO214AA Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 7V Max. forward impulse current: 58.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA Mounting: SMD Leakage current: 0.8mA |
Produkt ist nicht verfügbar |