auf Bestellung 959 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 6.79 EUR |
| 10+ | 6.76 EUR |
| 25+ | 6.73 EUR |
| 100+ | 6.32 EUR |
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Technische Details MSMLJ36AE3 Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB, Packaging: Bulk, Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -65°C ~ 150°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 51.6A, Voltage - Reverse Standoff (Typ): 36V, Supplier Device Package: DO-214AB, Unidirectional Channels: 1, Voltage - Breakdown (Min): 40V, Voltage - Clamping (Max) @ Ipp: 58.1V, Power - Peak Pulse: 3000W (3kW), Power Line Protection: No, Grade: Military, Qualification: MIL-PRF-19500.
Weitere Produktangebote MSMLJ36AE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MSMLJ36AE3 | Hersteller : MICROSEMI |
 DO-214AB/3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE MSMLJ36Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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.jpg "MSMLJ36AE3") |
MSMLJ36AE3 | Hersteller : Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 51.6A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |