MSS1P6HM3J_A/H

MSS1P6HM3J_A/H Vishay General Semiconductor - Diodes Division


mss1p6.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 570 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
55+0.32 EUR
100+0.26 EUR
500+0.19 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MSS1P6HM3J_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 60V 1A DO219AD, Packaging: Tape & Reel (TR), Package / Case: DO-219AD, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AD (MicroSMP), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 60 V, Qualification: AEC-Q101.

Weitere Produktangebote MSS1P6HM3J_A/H nach Preis ab 0.13 EUR bis 0.56 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MSS1P6HM3J_A/H MSS1P6HM3J_A/H Hersteller : Vishay General Semiconductor mss1p6.pdf Schottky Diodes & Rectifiers 1A 60V SM Schottky Rect
auf Bestellung 12692 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.36 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.17 EUR
2500+0.16 EUR
4500+0.13 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MSS1P6HM3J_A/H MSS1P6HM3J_A/H Hersteller : Vishay General Semiconductor - Diodes Division mss1p6.pdf Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Tape & Reel (TR)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH