
MSS1P6HM3J_A/H Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 60V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
36+ | 0.49 EUR |
55+ | 0.32 EUR |
100+ | 0.26 EUR |
500+ | 0.19 EUR |
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Technische Details MSS1P6HM3J_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 1A DO219AD, Packaging: Tape & Reel (TR), Package / Case: DO-219AD, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 40pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-219AD (MicroSMP), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 60 V, Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 60 V, Qualification: AEC-Q101.
Weitere Produktangebote MSS1P6HM3J_A/H nach Preis ab 0.13 EUR bis 0.56 EUR
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MSS1P6HM3J_A/H | Hersteller : Vishay General Semiconductor |
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auf Bestellung 12692 Stücke: Lieferzeit 10-14 Tag (e) |
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MSS1P6HM3J_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 60 V Qualification: AEC-Q101 |
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