Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > MSS2P3HM3/89A
MSS2P3HM3/89A

MSS2P3HM3/89A Vishay General Semiconductor - Diodes Division

mss2p3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO219AD
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 250 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AD (MicroSMP)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AD
Packaging: Tape & Reel (TR)
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Technische Details MSS2P3HM3/89A Vishay General Semiconductor - Diodes Division

Description: DIODE SCHOTTKY 30V 2A DO219AD, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 250 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 30 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AD (MicroSMP), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 65pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AD, Packaging: Tape & Reel (TR).